* VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.

General Features
* VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ)
* High density cell design for ultr.

The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features
* VDS =82V,ID =95A RDS(ON) < 8..

NCE8295A

NCE8295AWD

NCE8290

NCE8290B

NCE8205

NCE8205A

NCE8205B

NCE8205E

NCE82H110

NCE82H110D

NCE82H140

NCE82H140D

NCE8010S